Three-Dimensional Effects Obtained from Capacitance Analysis of an SRAM Cell

	Nanotech 2001 Vol. 1 Technical Proceedings of the 2001 International Conference on Modeling and Simulation of Microsystems Chapter 8: Characterizaton, Parameter Extraction, Calibration
	Three-Dimensional Effects Obtained from Capacitance Analysis of an SRAM Cell
Authors:	Y. Takemura, K. Osada, M. Yagyu, K. Yamaguchi, J. Ushio and T. Maruizumi
Affilation:	Hitachi Ltd., JP
Pages:	394 - 397
Keywords:	interconnect, capacitance, Green's function method, 3D effects, SRAM
Abstract:	Employing Green's function method, we analyzed the 3D capacitance for the hole interconnect structure in an SRAM cell. We found novel 3D effects as follows; (1) via connection increases the capacitance of parallel lines, (2) as the line length difference becomes large, the capacitance of parallel lines becomes much larger than that calculated from • S / d, (3) capacitance between vertical contact vias (CNTs) and horizontal gate is large although their heights are significantly different. We think our analysis method is useful in designing high-speed ULSIs.
	View PDF of paper
ISBN:	0-9708275-0-4
Pages:	638
Special:	3 CD Set — 15% off with Free Shipping
Up