Nanotech 2001 Vol. 1
Nanotech 2001 Vol. 1
Technical Proceedings of the 2001 International Conference on Modeling and Simulation of Microsystems

Characterizaton, Parameter Extraction, Calibration Chapter 8

Three-Dimensional Effects Obtained from Capacitance Analysis of an SRAM Cell

Authors: Y. Takemura, K. Osada, M. Yagyu, K. Yamaguchi, J. Ushio and T. Maruizumi

Affilation: Hitachi Ltd., Japan

Pages: 394 - 397

Keywords: interconnect, capacitance, Green's function method, 3D effects, SRAM

Abstract:
Employing Green's function method, we analyzed the 3D capacitance for the hole interconnect structure in an SRAM cell. We found novel 3D effects as follows; (1) via connection increases the capacitance of parallel lines, (2) as the line length difference becomes large, the capacitance of parallel lines becomes much larger than that calculated from • S / d, (3) capacitance between vertical contact vias (CNTs) and horizontal gate is large although their heights are significantly different. We think our analysis method is useful in designing high-speed ULSIs.


ISBN: 0-9708275-0-4
Pages: 638

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