Nano Science and Technology Institute
Nanotech 2001 Vol. 1
Nanotech 2001 Vol. 1
Technical Proceedings of the 2001 International Conference on Modeling and Simulation of Microsystems
 
Chapter 8: Characterizaton, Parameter Extraction, Calibration
 

Three-Dimensional Effects Obtained from Capacitance Analysis of an SRAM Cell

Authors:Y. Takemura, K. Osada, M. Yagyu, K. Yamaguchi, J. Ushio and T. Maruizumi
Affilation:Hitachi Ltd., JP
Pages:394 - 397
Keywords:interconnect, capacitance, Green's function method, 3D effects, SRAM
Abstract:Employing Green's function method, we analyzed the 3D capacitance for the hole interconnect structure in an SRAM cell. We found novel 3D effects as follows; (1) via connection increases the capacitance of parallel lines, (2) as the line length difference becomes large, the capacitance of parallel lines becomes much larger than that calculated from • S / d, (3) capacitance between vertical contact vias (CNTs) and horizontal gate is large although their heights are significantly different. We think our analysis method is useful in designing high-speed ULSIs.
Three-Dimensional Effects Obtained from Capacitance Analysis of an SRAM CellView PDF of paper
ISBN:0-9708275-0-4
Pages:638
Up
© 2014 Nano Science and Technology Institute. All Rights Reserved.
Terms of Use | Privacy Policy | Contact Us | Site Map