Nano Science and Technology Institute
Nanotech 2001 Vol. 1
Nanotech 2001 Vol. 1
Technical Proceedings of the 2001 International Conference on Modeling and Simulation of Microsystems
Chapter 7: Applications: MEMS, Sensors

MEMS Simulation in Heavily Doped Silicon Devices

Authors:K. Matsuda and Y. Kanda
Affilation:Naruto University of Education, US
Pages:346 - 349
Keywords:MEMS, heavy doping, mobility, piezoresistance
Abstract:Simulation of the semiconductor transport under heavily doped and stressed conditions is presented. The degenerate statistics are introduced by taking into account the density-of-state functions for the band tail and the impurity band. The momentum-dependent dielectric function is used for the dispersive screening and the carrier-carrier interaction which appear in the impurity scattering of the heavily doped silicon. The effects of mechanical stress on the conductivity are implemented by the relation between the stress and the Fermi energy, in which contributions of the carrier transfer and the mobility change for each of the split bands are included. As an application of this modeling, simulations for piezoeresistive sensors are presented.
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