Authors: A. Rahman, Z. Ren, J-H. Rhew and M.S. Lundstrom
Affilation: Purdue University, United States
Pages: 554 - 557
Keywords: nanoscale MOSFETs, compact scattering model
A new compact model for nanoscale MOSFETs based on scattering theory is proposed for the full range of VGS and VDS covering sub-threshold, linear and saturation regions of operation. Quantum confinement and carrier degeneracy are fully accounted for in this model. The model is continuous above and below threshold and from the linear to saturated regions. It works all the way to ballistic limit. Using this model, the I-V characteristics of a symmetric Double Gate MOSFET are simulated and compared with 2D numerical simulation. The analytical model shows good agreement with full 2D simulation.