Nanotech 2001 Vol. 1
Nanotech 2001 Vol. 1
Technical Proceedings of the 2001 International Conference on Modeling and Simulation of Microsystems

Quantum Effects, Quantum Devices and Spintronics Chapter 11

Towards a Compact Scattering Model for Nanoscale MOSFETs

Authors: A. Rahman, Z. Ren, J-H. Rhew and M.S. Lundstrom

Affilation: Purdue University, United States

Pages: 554 - 557

Keywords: nanoscale MOSFETs, compact scattering model

A new compact model for nanoscale MOSFETs based on scattering theory is proposed for the full range of VGS and VDS covering sub-threshold, linear and saturation regions of operation. Quantum confinement and carrier degeneracy are fully accounted for in this model. The model is continuous above and below threshold and from the linear to saturated regions. It works all the way to ballistic limit. Using this model, the I-V characteristics of a symmetric Double Gate MOSFET are simulated and compared with 2D numerical simulation. The analytical model shows good agreement with full 2D simulation.

Towards a Compact Scattering Model for Nanoscale MOSFETs

ISBN: 0-9708275-0-4
Pages: 638