An Effective Potential Method for Including Quantum Effects Into the Simulation of Ultra-Short and Ultra-Narrow Channel MOSFETs

	Nanotech 2001 Vol. 1 Technical Proceedings of the 2001 International Conference on Modeling and Simulation of Microsystems Chapter 11: Quantum Effects, Quantum Devices and Spintronics
	An Effective Potential Method for Including Quantum Effects Into the Simulation of Ultra-Short and Ultra-Narrow Channel MOSFETs
Authors:	R. Akis, S. Milicic, D.K. Ferry and D. Vasileska
Affilation:	Arizone State University, US
Pages:	550 - 553
Keywords:	ultra-small MOSFETs, quantization, Monte Carlo simulation, SOI devices.
Abstract:	Quantum effects are known to occur in the channel region of MOSFET devices, in which the carriers are confined in a triangular potential well at the semiconductor-oxide interface. Typically, these effects are quantified by a simultaneous solution of the S
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ISBN:	0-9708275-0-4
Pages:	638
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