Nanotech 2001 Vol. 1
Nanotech 2001 Vol. 1
Technical Proceedings of the 2001 International Conference on Modeling and Simulation of Microsystems

Quantum Effects, Quantum Devices and Spintronics Chapter 11

An Effective Potential Method for Including Quantum Effects Into the Simulation of Ultra-Short and Ultra-Narrow Channel MOSFETs

Authors: R. Akis, S. Milicic, D.K. Ferry and D. Vasileska

Affilation: Arizone State University, United States

Pages: 550 - 553

Keywords: ultra-small MOSFETs, quantization, Monte Carlo simulation, SOI devices.

Abstract:
Quantum effects are known to occur in the channel region of MOSFET devices, in which the carriers are confined in a triangular potential well at the semiconductor-oxide interface. Typically, these effects are quantified by a simultaneous solution of the S


ISBN: 0-9708275-0-4
Pages: 638

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