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 | Nanotech 2001 Vol. 1
Technical Proceedings of the 2001 International Conference on Modeling and Simulation of Microsystems
Chapter 10: Semiconductor Device Modeling and Novel Structures Simulation |
| | Numerical Simulation and Analytical Modeling of Strong-Inversion Gate Capacitance in Ultra-Short (30nm) MOSFETs | | Authors: | C. Sudhama, O. Spulber, C. McAndrew and R. Thoma | | Affilation: | Motorola SPS, U.S.A. | | Pages: | 450 - 453 | | Keywords: | novel, MOSFET, fringe-capacitance, strong-inversion, poly-depletion, TCAD, numerical simulation | | Abstract: | Bulk and novel MOSFET structures with gate-lengths in the 30nm regime are to become industry standards in ~2007. As devices are scaled down to these lengths, overlap- and fringe-capacitance between the gate and source/drain regions gain more importance a |  | View paper | | ISBN: | 0-9708275-0-4 |
| Pages: | 638 |
| Hardcopy: | $100.00 |
| Special: | 3 CD Set — 15% off with Free Shipping |
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