Nanotech 2001 Vol. 1
Nanotech 2001 Vol. 1
Technical Proceedings of the 2001 International Conference on Modeling and Simulation of Microsystems

Semiconductor Device Modeling and Novel Structures Simulation Chapter 10

Numerical Simulation and Analytical Modeling of Strong-Inversion Gate Capacitance in Ultra-Short (30nm) MOSFETs

Authors: C. Sudhama, O. Spulber, C. McAndrew and R. Thoma

Affilation: Motorola SPS, United States

Pages: 450 - 453

Keywords: novel, MOSFET, fringe-capacitance, strong-inversion, poly-depletion, TCAD, numerical simulation

Abstract:
Bulk and novel MOSFET structures with gate-lengths in the 30nm regime are to become industry standards in ~2007. As devices are scaled down to these lengths, overlap- and fringe-capacitance between the gate and source/drain regions gain more importance a

Numerical Simulation and Analytical Modeling of Strong-Inversion Gate Capacitance in Ultra-Short (30nm) MOSFETs

ISBN: 0-9708275-0-4
Pages: 638