Nano Science and Technology Institute
Nanotech 2001 Vol. 1
Nanotech 2001 Vol. 1
Technical Proceedings of the 2001 International Conference on Modeling and Simulation of Microsystems
 
Chapter 10: Semiconductor Device Modeling and Novel Structures Simulation
 

Numerical Simulation and Analytical Modeling of Strong-Inversion Gate Capacitance in Ultra-Short (30nm) MOSFETs

Authors:C. Sudhama, O. Spulber, C. McAndrew and R. Thoma
Affilation:Motorola SPS, US
Pages:450 - 453
Keywords:novel, MOSFET, fringe-capacitance, strong-inversion, poly-depletion, TCAD, numerical simulation
Abstract:Bulk and novel MOSFET structures with gate-lengths in the 30nm regime are to become industry standards in ~2007. As devices are scaled down to these lengths, overlap- and fringe-capacitance between the gate and source/drain regions gain more importance a
Numerical Simulation and Analytical Modeling of Strong-Inversion Gate Capacitance in Ultra-Short (30nm) MOSFETsView PDF of paper
ISBN:0-9708275-0-4
Pages:638
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