Numerical Simulation and Analytical Modeling of Strong-Inversion Gate Capacitance in Ultra-Short (30nm) MOSFETs

	Nanotech 2001 Vol. 1 Technical Proceedings of the 2001 International Conference on Modeling and Simulation of Microsystems Chapter 10: Semiconductor Device Modeling and Novel Structures Simulation
	Numerical Simulation and Analytical Modeling of Strong-Inversion Gate Capacitance in Ultra-Short (30nm) MOSFETs
Authors:	C. Sudhama, O. Spulber, C. McAndrew and R. Thoma
Affilation:	Motorola SPS, US
Pages:	450 - 453
Keywords:	novel, MOSFET, fringe-capacitance, strong-inversion, poly-depletion, TCAD, numerical simulation
Abstract:	Bulk and novel MOSFET structures with gate-lengths in the 30nm regime are to become industry standards in ~2007. As devices are scaled down to these lengths, overlap- and fringe-capacitance between the gate and source/drain regions gain more importance a
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ISBN:	0-9708275-0-4
Pages:	638
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