A Comparative Study of Double-Gate and Surrounding-Gate MOSFETs in Strong Inversion and Accumulation Using an Analytical Model

	Nanotech 2001 Vol. 1 Technical Proceedings of the 2001 International Conference on Modeling and Simulation of Microsystems Chapter 10: Semiconductor Device Modeling and Novel Structures Simulation
	A Comparative Study of Double-Gate and Surrounding-Gate MOSFETs in Strong Inversion and Accumulation Using an Analytical Model
Authors:	Y. Chen and J. Luo
Affilation:	University of California Berkeley, US
Pages:	546 - 549
Keywords:	double-gate and surrounding-gate MOSFET, body, strong inversion, volume inversion
Abstract:	An analytical model for the electric characteristics of ultrathin double-gate and surrounding-gate MOSFETs in strong inversion and accumulation is presented. The analytical solutions to the 1-D simplified Poisson's equation in both Cartesian and cylindrical coordinates with symmetric boundary conditions are examined. The concentration of the induced inversion charge by the same surface potential is found significantly higher in the surrounding-gate MOSFET, which indicates its better gate control and achievable higher current. Finally, the full 1-D Poisson's equation is numerically solved and compared with the analytical solution of the simplified equation, and an excellent agreement between them is found.
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ISBN:	0-9708275-0-4
Pages:	638
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