Nano Science and Technology Institute
Nanotech 2001 Vol. 1
Nanotech 2001 Vol. 1
Technical Proceedings of the 2001 International Conference on Modeling and Simulation of Microsystems
Chapter 10: Semiconductor Device Modeling and Novel Structures Simulation

Simulation of HgCdTe Double Layer Heterojunction Detector Devices

Authors:G.T. Hess, T.J. Sanders, G. Newsome and T. Fischer
Affilation:Florida Institute of Technology, US
Pages:542 - 545
Keywords:statistical simulation, HgCdTe detector, focal plane array, semiconductor modeling, infrared radiation
Abstract:Mercury-Cadmium-Telluride (HgCdTe) diodes are used as detectors of long wavelength photons by interaction of the infrared radiation with the atomic lattice of the material, creating hole-electron pairs and subsequent photocurrents. Models for these physical phenomena have been created and used to structure a new simulator for the HgCdTe device. Statistical simulation methods are being employed to implement optimization of the detector. Finally, data on specially built HgCdTe diodes has been compared with theoretical expectations derived from the HgCdTe detector simulator.
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