Authors: J.S. Wong, J.G. Ma, K.S. Yeo and M.A. Do
Affilation: Nanyang Technological University, Singapore
Pages: 534 - 537
Keywords: semiconductor, MOSFET's, threshold voltage, extraction method
A new approach for the extraction of threshold voltage (Vth) is proposed, namely, the "Third Derivative of Drain-Source Current" method or simply "TD" method. This method extracts the Vth by finding the Vgs where the third derivative of Ids is maximal. It meets the threshold condition requirement, which is the onset of the inversion channel creation. The method has been tested on transistors down to 0.25mm channel length and is found to be fast, accurate and simple to implement using standard measurement equipment.