Nano Science and Technology Institute
Nanotech 2001 Vol. 1
Nanotech 2001 Vol. 1
Technical Proceedings of the 2001 International Conference on Modeling and Simulation of Microsystems
Chapter 10: Semiconductor Device Modeling and Novel Structures Simulation

A New Approach for the Extraction of Threshold Voltage for MOSFET’s

Authors:J.S. Wong, J.G. Ma, K.S. Yeo and M.A. Do
Affilation:Nanyang Technological University, SG
Pages:534 - 537
Keywords:semiconductor, MOSFET's, threshold voltage, extraction method
Abstract:A new approach for the extraction of threshold voltage (Vth) is proposed, namely, the "Third Derivative of Drain-Source Current" method or simply "TD" method. This method extracts the Vth by finding the Vgs where the third derivative of Ids is maximal. It meets the threshold condition requirement, which is the onset of the inversion channel creation. The method has been tested on transistors down to 0.25mm channel length and is found to be fast, accurate and simple to implement using standard measurement equipment.
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