Determination of Low-Frequency Noise Spectrum in Ion-sensitive Field Effect Transistors (ISFET's) Based on a Physical Model for Drift

	Nanotech 2001 Vol. 1 Technical Proceedings of the 2001 International Conference on Modeling and Simulation of Microsystems Chapter 10: Semiconductor Device Modeling and Novel Structures Simulation
	Determination of Low-Frequency Noise Spectrum in Ion-sensitive Field Effect Transistors (ISFET's) Based on a Physical Model for Drift
Authors:	S. Jamasb, S.D. Collins and R.L. Smith
Affilation:	Conexant Systems, US
Pages:	514 - 517
Keywords:	flicker (1/f) noise, drift, ISFET
Abstract:	A physical model for drift in pH-sensitive ISFET's is employed to extract the inherent low-frequency noise power spectral density associated with these devices. The noise spectrum extracted from measured drift data demonstrates ideal 1/f noise behavior down to 10Hz. At lower frequencies, however, the resolution and accuracy of the ISFET is dominated by the drift behavior of the device. The distinction between drift and low-frequency noise is discussed based on the physical bases underlying each phenomenon.
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ISBN:	0-9708275-0-4
Pages:	638
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