Simulation of Recess-Structure Dependence of Gate-Lag Phenomena in GaAs MESFETs

	Nanotech 2001 Vol. 1 Technical Proceedings of the 2001 International Conference on Modeling and Simulation of Microsystems Chapter 10: Semiconductor Device Modeling and Novel Structures Simulation
	Simulation of Recess-Structure Dependence of Gate-Lag Phenomena in GaAs MESFETs
Authors:	K. Horio, Y. Mitani and A. Wakabayashi
Affilation:	Shibaura Institute of Technology, JP
Pages:	510 - 513
Keywords:	GaAs MESFET, gate lag, surface state, recessed gate, buried gate
Abstract:	We have made two-dimensional simulation of turn-on characteristics of recessed-gate and buried-gate GaAs MESFETs, and studied how the gate-lag or the slow current transient (which may occur due to surface states) is affected by the recess-structural parameters and the off-state gate voltage VGoff . It is shown that when VGoff is around the threshold voltage (pinch-off voltage) Vth, the gate-lag could be greatly reduced by introducing the buried-gate structure. However, it is suggested that large gate-lag might be seen when VGoff is much more negative than Vth.
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ISBN:	0-9708275-0-4
Pages:	638
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