Nanotech 2001 Vol. 1
Nanotech 2001 Vol. 1
Technical Proceedings of the 2001 International Conference on Modeling and Simulation of Microsystems

Semiconductor Device Modeling and Novel Structures Simulation Chapter 10

Using ‘Adaptive Resurf’ Technique and Field Plate Working to Improve the Safe Operating Area of n-type Drain Extended MOS Transistors

Authors: B. Bakeroot, P. Moens, M. Vermandel and J. Doutreloigne

Affilation: University of Gent, Belgium

Pages: 498 - 501

Keywords: MOS transistor, SOA, adaptive resurf, field plate, TCAD

Abstract:
Using TCAD, an n-type DEMOS (Drain Extended MOS) has been developed in a standard 0:35 mCMOS technology. The devices are optimised towards a Safe Operating Area (SOA) of 60 - 65 V using an n-type "adaptive resurf" implant under the field oxide. In this work, only two additional masks are added to the standard process flow (one ntub mask as well), rendering the implementation very cost-effective. In this paper it is shown that the optimal dose and layout of the adaptive resurf implant will strongly be determined by the SOA-breakdown voltage trade-off. Moreover,it is shown that the optimal dose is dependent on the size of the device, especially on the field plate length.

Using ‘Adaptive Resurf’ Technique and Field Plate Working to Improve the Safe Operating Area of n-type Drain Extended MOS Transistors

ISBN: 0-9708275-0-4
Pages: 638