Nanotech 2001 Vol. 1
Nanotech 2001 Vol. 1
Technical Proceedings of the 2001 International Conference on Modeling and Simulation of Microsystems

Semiconductor Device Modeling and Novel Structures Simulation Chapter 10

A Model for Fully Depleted Double Gate SOI MOS Transistors Including Temperature Effects

Authors: R. Gharabagi

Affilation: St. Louis University, United States

Pages: 490 - 493

Keywords: model, fully depleted double gate SOI MOS transistors, temperature effects

Abstract:
A model for a fully depleted double gate Silicon on Insulator (SOI) Metal Oxide Semiconductor (MOS) Transistors is presented. Small geometry effects such carrier velocity saturation, mobility degradation, and channel length modulation are included. Both l

A Model for Fully Depleted Double Gate SOI MOS Transistors Including Temperature Effects

ISBN: 0-9708275-0-4
Pages: 638