Nano Science and Technology Institute
Nanotech 2001 Vol. 1
Nanotech 2001 Vol. 1
Technical Proceedings of the 2001 International Conference on Modeling and Simulation of Microsystems
 
Chapter 10: Semiconductor Device Modeling and Novel Structures Simulation
 

A Model for Fully Depleted Double Gate SOI MOS Transistors Including Temperature Effects

Authors:R. Gharabagi
Affilation:St. Louis University, US
Pages:490 - 493
Keywords:model, fully depleted double gate SOI MOS transistors, temperature effects
Abstract:A model for a fully depleted double gate Silicon on Insulator (SOI) Metal Oxide Semiconductor (MOS) Transistors is presented. Small geometry effects such carrier velocity saturation, mobility degradation, and channel length modulation are included. Both l
A Model for Fully Depleted Double Gate SOI MOS Transistors Including Temperature EffectsView PDF of paper
ISBN:0-9708275-0-4
Pages:638
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