A Model for Fully Depleted Double Gate SOI MOS Transistors Including Temperature Effects

	Nanotech 2001 Vol. 1 Technical Proceedings of the 2001 International Conference on Modeling and Simulation of Microsystems Chapter 10: Semiconductor Device Modeling and Novel Structures Simulation
	A Model for Fully Depleted Double Gate SOI MOS Transistors Including Temperature Effects
Authors:	R. Gharabagi
Affilation:	St. Louis University, US
Pages:	490 - 493
Keywords:	model, fully depleted double gate SOI MOS transistors, temperature effects
Abstract:	A model for a fully depleted double gate Silicon on Insulator (SOI) Metal Oxide Semiconductor (MOS) Transistors is presented. Small geometry effects such carrier velocity saturation, mobility degradation, and channel length modulation are included. Both l
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ISBN:	0-9708275-0-4
Pages:	638
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