Authors: S.B. Chiah, X. Zhou, K.Y. Lim, Y. Wang, A. See and L. Chan
Affilation: Nanyang Technological University, Singapore
Pages: 486 - 489
Keywords: Reverse short-channel effect, effective channel doping, pile-up charge centroid, submicron MOSFET
A model for effective channel doping in submicron LDD nMOSFET's is presented by adding the effect of the lateral nonuniform pile-up charge centroid to the Gaussian profile with peak doping near the edge of the metallurgical channel. The effect of the pile-up centroid on the threshold voltage parameter extraction is elaborated, from which semi-empirical relationships on all fitting parameters are formulated. Threshold voltage versus gate length data from MEDICI-simulated devices with lateral Gaussian pile-up doping profiles are used for the verification of this model.