Semi-Empirical Approach to Modeling Reverse Short-Channel Effect in Submicron MOSFET’s

	Nanotech 2001 Vol. 1 Technical Proceedings of the 2001 International Conference on Modeling and Simulation of Microsystems Chapter 10: Semiconductor Device Modeling and Novel Structures Simulation
	Semi-Empirical Approach to Modeling Reverse Short-Channel Effect in Submicron MOSFET’s
Authors:	S.B. Chiah, X. Zhou, K.Y. Lim, Y. Wang, A. See and L. Chan
Affilation:	Nanyang Technological University, SG
Pages:	486 - 489
Keywords:	Reverse short-channel effect, effective channel doping, pile-up charge centroid, submicron MOSFET
Abstract:	A model for effective channel doping in submicron LDD nMOSFET's is presented by adding the effect of the lateral nonuniform pile-up charge centroid to the Gaussian profile with peak doping near the edge of the metallurgical channel. The effect of the pile-up centroid on the threshold voltage parameter extraction is elaborated, from which semi-empirical relationships on all fitting parameters are formulated. Threshold voltage versus gate length data from MEDICI-simulated devices with lateral Gaussian pile-up doping profiles are used for the verification of this model.
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ISBN:	0-9708275-0-4
Pages:	638
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