 | Nanotech 2001 Vol. 1
Technical Proceedings of the 2001 International Conference on Modeling and Simulation of Microsystems
Chapter 10: Semiconductor Device Modeling and Novel Structures Simulation |
A Scalable RF Model of the Metal-Oxide-Metal (MOM) Capacitor | |
| Authors: | G. Chunqi, D. Manh Anh, Z. Zheng and F. Boyland |
| Affilation: | Chartered Semiconductor Manufacturing Ltd., SG |
| Pages: | 482 - 485 |
| Keywords: | RF, MOM capacitor, S-parameter, scalability, polynomial equation, subcircuit. |
| Abstract: | An accurate, scalable RF subcircuit model is presented for Metal-Oxide-Metal (MOM) capacitor. Polynomial equations are used to describe the relation between the value of each subcircuit component and the area of MOM capacitor. The model fits very well the measured data in frequency range 50 MHz to 10 GHz. The scalable characteristic of model makes it very easy to be implemented in normal EDA software and provides great convenience for circuit designer. |
 | View PDF of paper |
| ISBN: | 0-9708275-0-4 |
| Pages: | 638 |
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