Authors: E. Lyumkis, R. Mickevicius, B. Polsky, G. Loechelt, A. Zlotnicka and R. Thoma
Affilation: Integrated Systems Engineering, Inc., United States
Pages: 478 - 481
Keywords: MOS, substrate current, hydrodynamics, simulation
We report results of hydrodynamic simulations and measurements of substrate currents in submicron MOSFET. Both simulations and measurements show anomalous dependence of the substrate current on lattice temperature, which is consistent with previously published experimental results . This unusual behavior of substrate current is due to the dependence of the electron energy relaxation length on lattice temperature, and cannot be explained within the commonly used drift-diffusion transport model.