Nanotech 2001 Vol. 1
Nanotech 2001 Vol. 1
Technical Proceedings of the 2001 International Conference on Modeling and Simulation of Microsystems

Semiconductor Device Modeling and Novel Structures Simulation Chapter 10

Substrate Current Simulations at Elevated Temperatures

Authors: E. Lyumkis, R. Mickevicius, B. Polsky, G. Loechelt, A. Zlotnicka and R. Thoma

Affilation: Integrated Systems Engineering, Inc., United States

Pages: 478 - 481

Keywords: MOS, substrate current, hydrodynamics, simulation

Abstract:
We report results of hydrodynamic simulations and measurements of substrate currents in submicron MOSFET. Both simulations and measurements show anomalous dependence of the substrate current on lattice temperature, which is consistent with previously published experimental results [1]. This unusual behavior of substrate current is due to the dependence of the electron energy relaxation length on lattice temperature, and cannot be explained within the commonly used drift-diffusion transport model.

Substrate Current Simulations at Elevated Temperatures

ISBN: 0-9708275-0-4
Pages: 638