Nano Science and Technology Institute
Nanotech 2001 Vol. 1
Nanotech 2001 Vol. 1
Technical Proceedings of the 2001 International Conference on Modeling and Simulation of Microsystems
Chapter 10: Semiconductor Device Modeling and Novel Structures Simulation

Substrate Current Simulations at Elevated Temperatures

Authors:E. Lyumkis, R. Mickevicius, B. Polsky, G. Loechelt, A. Zlotnicka and R. Thoma
Affilation:Integrated Systems Engineering, Inc., US
Pages:478 - 481
Keywords:MOS, substrate current, hydrodynamics, simulation
Abstract:We report results of hydrodynamic simulations and measurements of substrate currents in submicron MOSFET. Both simulations and measurements show anomalous dependence of the substrate current on lattice temperature, which is consistent with previously published experimental results [1]. This unusual behavior of substrate current is due to the dependence of the electron energy relaxation length on lattice temperature, and cannot be explained within the commonly used drift-diffusion transport model.
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