 | Nanotech 2001 Vol. 1
Technical Proceedings of the 2001 International Conference on Modeling and Simulation of Microsystems
Chapter 10: Semiconductor Device Modeling and Novel Structures Simulation |
| - | Numerical Simulation and Analytical Modeling of Strong-Inversion Gate Capacitance in Ultra-Short (30nm) MOSFETs |
| | C. Sudhama, O. Spulber, C. McAndrew and R. Thoma |
| | Motorola SPS, U.S.A. |
| - | Spatial Modulation of the Dielectric Permittivity and its Effect on the Spectral Responsivity of Heterodimensional Photodetectors |
| | F. Castro and B. Nabet |
| | Motorola Laboratories, U.S.A. |
| - | Improved Modified Local Density Approximation for Modeling of Size Quantization in NMOSFETs |
| | C. Jungemann, C.D. Nguyen, B. Neinhüs, S. Decker and B. Meinerzhagen |
| | Universitat Bremen, Germany |
| - | Impact of Non-Stationary Transport Effects on Realistic 50nm MOS Technology |
| | D. Munteanu, G. Le Carval and G. Guegan |
| | LETI, CEA/Grenoble, DMEL, France |
| - | A Qualitative Study on Global and Local Optimization Techniques for TCAD Analysis Tasks |
| | T. Binder, C. Heitzinger and S. Selberherr |
| | Technical University Wien, Austria |
| - | 3-D Simulation and Modeling of Signal Isolation in RF/IF Circuits |
| | S. Bharatan, P. Welch, K.H. To, R. Thoma and M. Huang |
| | Motorola, Digital DNA Laboratories, U.S.A. |
| - | A Physics-Based Impact Ionization Model Using Six Moments of the Boltzmann Transport Equation |
| | T. Grasser, H. Kosina, M. Gritsch and S. Selberherr |
| | TU Wien, Austria |
| - | Substrate Current Simulations at Elevated Temperatures |
| | E. Lyumkis, R. Mickevicius, B. Polsky, G. Loechelt, A. Zlotnicka and R. Thoma |
| | Integrated Systems Engineering, Inc., U.S.A. |
| - | A Scalable RF Model of the Metal-Oxide-Metal (MOM) Capacitor |
| | G. Chunqi, D. Manh Anh, Z. Zheng and F. Boyland |
| | Chartered Semiconductor Manufacturing Ltd., Singapore |
| - | Semi-Empirical Approach to Modeling Reverse Short-Channel Effect in Submicron MOSFET’s |
| | S.B. Chiah, X. Zhou, K.Y. Lim, Y. Wang, A. See and L. Chan |
| | Nanyang Technological University, Singapore |
| - | A Model for Fully Depleted Double Gate SOI MOS Transistors Including Temperature Effects |
| | R. Gharabagi |
| | St. Louis University, U.S.A. |
| - | A Simplified Approach for Noise Parameter Transformation Between Common Emitter and Common Base InP DHBT |
| | Y.Z. Xiong, G.I. Ng, H. Wang, C.L. Tan and H. Yang |
| | Nanyang Technological University, Singapore |
| - | Using ‘Adaptive Resurf’ Technique and Field Plate Working to Improve the Safe Operating Area of n-type Drain Extended MOS Transistors |
| | B. Bakeroot, P. Moens, M. Vermandel and J. Doutreloigne |
| | University of Gent, Belgium |
| - | Broadband Millimeter Wave Finline Antenna Simulation and Performance |
| | J.S. Fu, C.L. Ng, Y. Kwang, E.K. Sia and C. Lu |
| | Nanyang Technological University, Singapore |
| - | Three-Dimensional Simulation of AlxGa1-xAs/GaAs Gradual Heterojunction Bipolar Transistor |
| | A.J. García-Loureiro, T.F. Pena, J.M. Lopez-González and Ll. Prat Viñas |
| | Univ. Santiago de Compostela, Spain |
| - | Simulation of Recess-Structure Dependence of Gate-Lag Phenomena in GaAs MESFETs |
| | K. Horio, Y. Mitani and A. Wakabayashi |
| | Shibaura Institute of Technology, Japan |
| - | Determination of Low-Frequency Noise Spectrum in Ion-sensitive Field Effect Transistors (ISFET's) Based on a Physical Model for Drift |
| | S. Jamasb, S.D. Collins and R.L. Smith |
| | Conexant Systems, U.S.A. |
| - | TCAD Modeling using a Neural Network Based Approach |
| | R. Matei, G. Dima and M.D. Profirescu |
| | University Politehnica of Bucharest, Romania |
| - | Modeling of Antipodal/BCSSS Transition for Millimeter Wave Finline High Q Local Injected Mixer |
| | E.K. Sia, J.S. Fu, C. Lu and S.H. Tan |
| | Nanyang Technological University, Singapore |
| - | Investigation of the Mechanism of Floating Node Assisted CMOS Latch-Up |
| | S-P. Sim, P. Guo, A. Kordesch, W.F. Chen, C-M. Liu, C.Y. Yang and K. Lee |
| | Santa Clara University, U.S.A. |
| - | Noise Modelling of Microwave Bipolar Transistors |
| | F. Patti, V. Miceli and B. Spagnolo |
| | Università di Palermo, Italy |
| - | A New Approach for the Extraction of Threshold Voltage for MOSFET’s |
| | J.S. Wong, J.G. Ma, K.S. Yeo and M.A. Do |
| | Nanyang Technological University, Singapore |
| - | Parallel Dynamic Load Balancing for Semiconductor Device Simulations on a Linux Cluster |
| | Y. Li, S-S. Lin, S-M. Yu, J-L. Liu, T-S. Chao and S.M. Sze |
| | National Chiao Tung University, Taiwan |
| - | Simulation of HgCdTe Double Layer Heterojunction Detector Devices |
| | G.T. Hess, T.J. Sanders, G. Newsome and T. Fischer |
| | Florida Institute of Technology, U.S.A. |
| - | A Comparative Study of Double-Gate and Surrounding-Gate MOSFETs in Strong Inversion and Accumulation Using an Analytical Model |
| | Y. Chen and J. Luo |
| | University of California Berkeley, U.S.A. |
| ISBN: | 0-9708275-0-4 |
| Pages: | 638 |
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