Nano Science and Technology Institute
MSM 2000
MSM 2000
Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
 
Chapter 9: Signal Integrity Simulation and Verification
 

Influence of Element Size on the Precision and Required Computational Effort for 3D FEM Interconnect Capacitance Simulations of ULSI DRAM Cells

Authors:A. Hieke
Affilation:Infineon Technologies Corporation, US
Pages:420 - 423
Keywords:capacitance, simulation, 3D, FEM, interconnect, mesh, element size, DRAM, ANSYS, CAMACO
Abstract:A fundamental proble of all FEM capacitance computations in MEMS and ULSI is to determine proper mesh size for the elements representing the considered model. In particular, opticaml mesh size selection is crucial for large 3D models to limit the required computational effort. HOwever, automatic mesh refining algorithms are not applicable and/or desirable in all cases. Five mesh distribution/densities for the same 6f2 DRAM cell model have been evaluated with respect to accuracy and CPU time using the APDL macro CAMACO for ANSYS (TM).
Influence of Element Size on the Precision and Required Computational Effort for 3D FEM Interconnect Capacitance Simulations of ULSI DRAM CellsView PDF of paper
ISBN:0-9666135-7-0
Pages:741
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