Influence of Element Size on the Precision and Required Computational Effort for 3D FEM Interconnect Capacitance Simulations of ULSI DRAM Cells

	MSM 2000 Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems Chapter 9: Signal Integrity Simulation and Verification
	Influence of Element Size on the Precision and Required Computational Effort for 3D FEM Interconnect Capacitance Simulations of ULSI DRAM Cells
Authors:	A. Hieke
Affilation:	Infineon Technologies Corporation, US
Pages:	420 - 423
Keywords:	capacitance, simulation, 3D, FEM, interconnect, mesh, element size, DRAM, ANSYS, CAMACO
Abstract:	A fundamental proble of all FEM capacitance computations in MEMS and ULSI is to determine proper mesh size for the elements representing the considered model. In particular, opticaml mesh size selection is crucial for large 3D models to limit the required computational effort. HOwever, automatic mesh refining algorithms are not applicable and/or desirable in all cases. Five mesh distribution/densities for the same 6f2 DRAM cell model have been evaluated with respect to accuracy and CPU time using the APDL macro CAMACO for ANSYS (TM).
	View PDF of paper
ISBN:	0-9666135-7-0
Pages:	741
Special:	3 CD Set — 15% off with Free Shipping
Up