MSM 2000
MSM 2000
Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems

Signal Integrity Simulation and Verification Chapter 9

Influence of Element Size on the Precision and Required Computational Effort for 3D FEM Interconnect Capacitance Simulations of ULSI DRAM Cells

Authors: A. Hieke

Affilation: Infineon Technologies Corporation, United States

Pages: 420 - 423

Keywords: capacitance, simulation, 3D, FEM, interconnect, mesh, element size, DRAM, ANSYS, CAMACO

Abstract:
A fundamental proble of all FEM capacitance computations in MEMS and ULSI is to determine proper mesh size for the elements representing the considered model. In particular, opticaml mesh size selection is crucial for large 3D models to limit the required computational effort. HOwever, automatic mesh refining algorithms are not applicable and/or desirable in all cases. Five mesh distribution/densities for the same 6f2 DRAM cell model have been evaluated with respect to accuracy and CPU time using the APDL macro CAMACO for ANSYS (TM).

Influence of Element Size on the Precision and Required Computational Effort for 3D FEM Interconnect Capacitance Simulations of ULSI DRAM Cells

ISBN: 0-9666135-7-0
Pages: 741