Nano Science and Technology Institute
MSM 2000
MSM 2000
Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
 
Chapter 8: Semiconductor Device Modeling
 

Squeezed Electrons in GaN Quantum Wells

Authors:B.K. Ridley, N.A. Zakhleniuk and C.R. Bennett
Affilation:University of Essex, UK
Pages:412 - 415
Keywords:quantum well, hot electrons, electron temperature, GaN, squeezed electron distribution
Abstract:We present an analytic theory of hot-electron transport in a GaN quantum well containing a large-enough electron concentration for strong electron-electron scattering to establish a drifted distribution. Novel behaviour includes the squeezed electron distribution and absolute cooling of the electron gas in a strong electric field when the electron temperature decreases with increase of the electric field. The current-voltage characteristics have the regions which obey the s-type dependence.
Squeezed Electrons in GaN Quantum WellsView PDF of paper
ISBN:0-9666135-7-0
Pages:741
Up
© 2014 Nano Science and Technology Institute. All Rights Reserved.
Terms of Use | Privacy Policy | Contact Us | Site Map