Nano Science and Technology Institute
MSM 2000
MSM 2000
Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
Chapter 8: Semiconductor Device Modeling

Squeezed Electrons in GaN Quantum Wells

Authors:B.K. Ridley, N.A. Zakhleniuk and C.R. Bennett
Affilation:University of Essex, UK
Pages:412 - 415
Keywords:quantum well, hot electrons, electron temperature, GaN, squeezed electron distribution
Abstract:We present an analytic theory of hot-electron transport in a GaN quantum well containing a large-enough electron concentration for strong electron-electron scattering to establish a drifted distribution. Novel behaviour includes the squeezed electron distribution and absolute cooling of the electron gas in a strong electric field when the electron temperature decreases with increase of the electric field. The current-voltage characteristics have the regions which obey the s-type dependence.
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