A Velocity-Overshoot Subthreshold Current Model for Deep-Submicrometer MOSFET Devices

	MSM 2000 Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems Chapter 8: Semiconductor Device Modeling
	A Velocity-Overshoot Subthreshold Current Model for Deep-Submicrometer MOSFET Devices
Authors:	W. Qian, X. Zhou, Y. Wang and K.Y. Lim
Affilation:	Nanyang Technological University, SG
Pages:	396 - 399
Keywords:	velocity-overshoot subthreshold current model, deep-submicron MOSFET devices
Abstract:	In this paper, a new theoretical approach to submicrometer MOSFET subthreshold current modeling is presented. The diffusion and drift currents are calculated, respectively. The effect of velocity overshoot on subthreshold current is investigated. Comparison with MEDICI simulation results verifies the model.
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ISBN:	0-9666135-7-0
Pages:	741
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