Nano Science and Technology Institute
MSM 2000
MSM 2000
Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
 
Chapter 8: Semiconductor Device Modeling
 

A Velocity-Overshoot Subthreshold Current Model for Deep-Submicrometer MOSFET Devices

Authors:W. Qian, X. Zhou, Y. Wang and K.Y. Lim
Affilation:Nanyang Technological University, SG
Pages:396 - 399
Keywords:velocity-overshoot subthreshold current model, deep-submicron MOSFET devices
Abstract:In this paper, a new theoretical approach to submicrometer MOSFET subthreshold current modeling is presented. The diffusion and drift currents are calculated, respectively. The effect of velocity overshoot on subthreshold current is investigated. Comparison with MEDICI simulation results verifies the model.
A Velocity-Overshoot Subthreshold Current Model for Deep-Submicrometer MOSFET DevicesView PDF of paper
ISBN:0-9666135-7-0
Pages:741
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