MSM 2000
MSM 2000
Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems

Semiconductor Device Modeling Chapter 8

The 2.4F2 Memory Cell Technology with Stacked-Surrounding Gate Transistor (S-SGT) DRAM

Authors: M. Suzuki, T. Endoh, H. Sakuraba and F. Masuoka

Affilation: Tohoku University, Japan

Pages: 388 - 391

Keywords: SGT, S-SGT, DRAM, three-dimensional memory

Abstract:
This paper reports that the Stacked-Surrounding Gate Transistor (S-SGT) DRAM achieves a cell size of 2.4F 2. The S-SGT DRAM is structured by stacking several SGT-type cells in series vertically. In order to realize cell size of 2.4F 2, we propose the cell design of S-SGT DRAM. By using proposed design, we demonstrate that the S-SGT DRAM can realize cell size of 2.4F 2 by process simulation, while cell size of conventional SGT DRAM is 4.8F 2. Therefore, the S-SGT DRAM is a promising candidate for future ultra high density DRAMs.


ISBN: 0-9666135-7-0
Pages: 741

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