Nano Science and Technology Institute
MSM 2000
MSM 2000
Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
Chapter 8: Semiconductor Device Modeling

Study of Well Barrier Hole Burning in Quantum Well Bistable Lasers

Authors:M. Ganesh Madhan, P.R. Vaya and N. Gunasekaran
Affilation:Anna University, IN
Pages:380 - 383
Keywords:multiple quantum wells, well barrier hole burning, semiconductor lasers, bistability, hysterisis, circuit modeling
Abstract:Quantum carrier capture and release effects on optical bistability in multiple quantum well (MQW) lasers are studied using the well barrier hole burning model. The ratio of carrier capture to release time (h) is varied and the hysterisis width, transient behavior are analysed by simulating the equivalent circuit of MQW bistable laser using circuit simulation program Pspice. The hysterisis width is found to increase with an increase in h. From the time response, improved damping and increased turn on delay are observed in switching characteristics for higher value of h.
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