Nano Science and Technology Institute
MSM 2000
MSM 2000
Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
Chapter 8: Semiconductor Device Modeling

Modelling Multilayer Semiconductor Structures

Authors:K. Brecl and J. Furlan
Affilation:University of Ljubljana, SI
Pages:376 - 379
Keywords:modeling, multilayer devices, extended Ebers-Moll model
Abstract:The interest in multilayer thin-film semiconductor structures is becoming bigger day by day. For multilayer structures both, low-quality and good-quality materials are used. An extended Ebers-Moll model for simulating multiayer structures was developed. The standard Ebers-Moll model for a transistor structure was extended to be used for more junctions. In addition photogenerated current, recombination current in space-charge region and carrier multiplication are added to the model. This model is actually used for a four-layer structure but can be easily extended to be used for any multilayer semiconductor device.
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