MSM 2000
MSM 2000
Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems

Semiconductor Device Modeling Chapter 8

Investigation of High Frequency Noise in a SiGe HBT Based on Shockley's Impedance Field Method and the Hydrodynamic Model

Authors: S. Decker, B. Neinhus, B. Heinemann, C. Jungemann and B. Meinerzhagen

Affilation: University of Bremen, Germany

Pages: 364 - 367

Keywords: HBT, noise figure, impedance field method, hydrodynamic model

Abstract:
This paper presents the first simulation of the minimum noise figure of a heterojunction bipolar transistor based on Shockley's impedance field method and the hydrodynamic model. The hydrodynamic model and the impedance field method are described as well as the optimization procedure for calculating the minimum noise figure from Y-parameters and noise voltage spectra. In addition to the minimum noise figure, DC and AC properties are simulated and compared to measurements in order to verify the new approach. Finally the spatial origin of noise is determined by simulation.


ISBN: 0-9666135-7-0
Pages: 741

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