Investigation of High Frequency Noise in a SiGe HBT Based on Shockley's Impedance Field Method and the Hydrodynamic Model

	MSM 2000 Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems Chapter 8: Semiconductor Device Modeling
	Investigation of High Frequency Noise in a SiGe HBT Based on Shockley's Impedance Field Method and the Hydrodynamic Model
Authors:	S. Decker, B. Neinhus, B. Heinemann, C. Jungemann and B. Meinerzhagen
Affilation:	University of Bremen, DE
Pages:	364 - 367
Keywords:	HBT, noise figure, impedance field method, hydrodynamic model
Abstract:	This paper presents the first simulation of the minimum noise figure of a heterojunction bipolar transistor based on Shockley's impedance field method and the hydrodynamic model. The hydrodynamic model and the impedance field method are described as well as the optimization procedure for calculating the minimum noise figure from Y-parameters and noise voltage spectra. In addition to the minimum noise figure, DC and AC properties are simulated and compared to measurements in order to verify the new approach. Finally the spatial origin of noise is determined by simulation.
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ISBN:	0-9666135-7-0
Pages:	741
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