MSM 2000
MSM 2000
Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems

Semiconductor Device Modeling Chapter 8

Modelling of the "Gated-Diode" Configuration in Bulk MOSFET's

Authors: A. Yip, Y.T. Yeow, G.S. Samudra and C.H. Ling

Affilation: TECH Semiconductor, Singapore

Pages: 360 - 363

Keywords: MOSFET, hot-carrier effects, interface traps, gated-diode, simulation

A study of the “gated-diode” configuration in MOSFET’s for characterising hot-carrier degradation by employing 2-D simulations is presented in this paper. We use both process and device simulations to understand operational sensitivity of this technique. The parameters involved in the gated-diode measurement like recombination processes and carrier concentrations, which are not available from experiments, will be discussed. The interface trap distribution across the bandgap and spatial distribution are also explored here. In addition, the gated-diode measurement method is modelled with specific task of determining interface state density.

Modelling of the "Gated-Diode" Configuration in Bulk MOSFET's

ISBN: 0-9666135-7-0
Pages: 741