Authors: J. Furlan and Z. Gorup
Affilation: University of Ljubljana, Slovenia
Pages: 352 - 355
Keywords: amorphous silicon, pn junction, tunneling currents
A theoretical model for the tunneling transport of charge carriers in forward-biased heavily doped amorphous silicon pn junctions was recently presented. In this paper, in addition to current-voltage characteristics in the forward direction, reverse-voltage characteristics are calculated and compared to the measured characteristics. The trap-assisted tunneling transport of carriers is described in terms of tunneling factor G, which can be treated as an effective increase in the apparent capture cross-section of carriers. Crucial factors affecting highly enhanced recombination-generation currents due to tunneling-assisted capture-emission and to potential barrier-lowering (Poole-Frenkel effect) at forward and reverse bias are discussed.