MSM 2000
MSM 2000
Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems

Semiconductor Device Modeling Chapter 8

Tunneling-Assisted Currents in n+p+ Amorphous Silicon Junctions
J. Furlan and Z. Gorup
University of Ljubljana, SI

Optimization of FIBMOSs through 2-D Device Simulations
J. Kang, D.K. Schroder and D.P. Pivin
Arizona State University, US

Modelling of the "Gated-Diode" Configuration in Bulk MOSFET's
A. Yip, Y.T. Yeow, G.S. Samudra and C.H. Ling
TECH Semiconductor, SG

Investigation of High Frequency Noise in a SiGe HBT Based on Shockley's Impedance Field Method and the Hydrodynamic Model
S. Decker, B. Neinhus, B. Heinemann, C. Jungemann and B. Meinerzhagen
University of Bremen, DE

Two-Dimensional MOSFET Dopant Profile by Inverse Modeling via Source/Drain-to-Substrate Capacitance Measurement
C.Y.T. Chiang, Y.T. Yeow and R. Ghodsi
University of Queensland, AU

Study of Voltage Tunable Asymmetric Quantum Well Structure for Infrared Detection
P.R. Vaya, S. Ananda Natarajan and K.R. Srinivasan
Indian Institute of Technology, IN

Modelling Multilayer Semiconductor Structures
K. Brecl and J. Furlan
University of Ljubljana, SI

Study of Well Barrier Hole Burning in Quantum Well Bistable Lasers
M. Ganesh Madhan, P.R. Vaya and N. Gunasekaran
Anna University, IN

Equation of p-n Junction for High Current Density Models of Transistor
A. Baskys
Semiconductor Physics Institute, LT

The 2.4F2 Memory Cell Technology with Stacked-Surrounding Gate Transistor (S-SGT) DRAM
M. Suzuki, T. Endoh, H. Sakuraba and F. Masuoka
Tohoku University, JP

Inverse Modeling for C-V Profiling of Modulated-Doped Semiconductor Structures
M.F. Kokorev, N.A. Maleev and D.V. Pakhnin
State Electrotechnical University, RU

A Velocity-Overshoot Subthreshold Current Model for Deep-Submicrometer MOSFET Devices
W. Qian, X. Zhou, Y. Wang and K.Y. Lim
Nanyang Technological University, SG

Monte-Carlo Simulation of GaAs Devices Using High Generality Object-Oriented Code and Encapsulated Scattering Tables
J. Harris and D. Vasileska
Arizona State University, US

A Mathematical Model for the Threshold Voltage of a Partially and Fully Depleted MOS/SOI Structure with a Gaussian Distribution in the Film
C. Ravariu, A. Rusu, D. Dobrescu, L. Dobrescu, F. Ravariu, C. Codreanu and M. Avram
University of Bucharest, RO

Modelling of Atmosphere Sensitive Heterojunctions for Device Applications
G. Mangamma and T. Gnanasekaran
Indira Gandhi Centre For Atomic Research, IN

Squeezed Electrons in GaN Quantum Wells
B.K. Ridley, N.A. Zakhleniuk and C.R. Bennett
University of Essex, UK


ISBN: 0-9666135-7-0
Pages: 741