 | MSM 2000
Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
Chapter 8: Semiconductor Device Modeling |
| - | Tunneling-Assisted Currents in n+p+ Amorphous Silicon Junctions |
| | J. Furlan and Z. Gorup |
| | University of Ljubljana, SI |
| - | Optimization of FIBMOSs through 2-D Device Simulations |
| | J. Kang, D.K. Schroder and D.P. Pivin |
| | Arizona State University, US |
| - | Modelling of the 'Gated-Diode' Configuration in Bulk MOSFET's |
| | A. Yip, Y.T. Yeow, G.S. Samudra and C.H. Ling |
| | TECH Semiconductor, SG |
| - | Investigation of High Frequency Noise in a SiGe HBT Based on Shockley's Impedance Field Method and the Hydrodynamic Model |
| | S. Decker, B. Neinhus, B. Heinemann, C. Jungemann and B. Meinerzhagen |
| | University of Bremen, DE |
| - | Two-Dimensional MOSFET Dopant Profile by Inverse Modeling via Source/Drain-to-Substrate Capacitance Measurement |
| | C.Y.T. Chiang, Y.T. Yeow and R. Ghodsi |
| | University of Queensland, AU |
| - | Study of Voltage Tunable Asymmetric Quantum Well Structure for Infrared Detection |
| | P.R. Vaya, S. Ananda Natarajan and K.R. Srinivasan |
| | Indian Institute of Technology, IN |
| - | Modelling Multilayer Semiconductor Structures |
| | K. Brecl and J. Furlan |
| | University of Ljubljana, SI |
| - | Study of Well Barrier Hole Burning in Quantum Well Bistable Lasers |
| | M. Ganesh Madhan, P.R. Vaya and N. Gunasekaran |
| | Anna University, IN |
| - | Equation of p-n Junction for High Current Density Models of Transistor |
| | A. Baskys |
| | Semiconductor Physics Institute, LT |
| - | The 2.4F2 Memory Cell Technology with Stacked-Surrounding Gate Transistor (S-SGT) DRAM |
| | M. Suzuki, T. Endoh, H. Sakuraba and F. Masuoka |
| | Tohoku University, JP |
| - | Inverse Modeling for C-V Profiling of Modulated-Doped Semiconductor Structures |
| | M.F. Kokorev, N.A. Maleev and D.V. Pakhnin |
| | State Electrotechnical University, RU |
| - | A Velocity-Overshoot Subthreshold Current Model for Deep-Submicrometer MOSFET Devices |
| | W. Qian, X. Zhou, Y. Wang and K.Y. Lim |
| | Nanyang Technological University, SG |
| - | Monte-Carlo Simulation of GaAs Devices Using High Generality Object-Oriented Code and Encapsulated Scattering Tables |
| | J. Harris and D. Vasileska |
| | Arizona State University, US |
| - | A Mathematical Model for the Threshold Voltage of a Partially and Fully Depleted MOS/SOI Structure with a Gaussian Distribution in the Film |
| | C. Ravariu, A. Rusu, D. Dobrescu, L. Dobrescu, F. Ravariu, C. Codreanu and M. Avram |
| | University of Bucharest, RO |
| - | Modelling of Atmosphere Sensitive Heterojunctions for Device Applications |
| | G. Mangamma and T. Gnanasekaran |
| | Indira Gandhi Centre For Atomic Research, IN |
| - | Squeezed Electrons in GaN Quantum Wells |
| | B.K. Ridley, N.A. Zakhleniuk and C.R. Bennett |
| | University of Essex, UK |
| ISBN: | 0-9666135-7-0 |
| Pages: | 741 |
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