MSM 2000
MSM 2000
Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems

Compact Modeling for Deep Submicron Devices Chapter 7

A New Continuous Model for Deep Submicron MOSFETs

Authors: K-M.S. Chan, N-C.A. Wong, C-J. Chao, D-B. Kao, S-C. Wong and C.Y. Yang

Affilation: Winbond Electronics Corporation America, United States

Pages: 345 - 347

Keywords: continuous model, deep submicron, MOSFET

Abstract:
A 1-D model is developed to account for mobile charges in the Source/Drain junction regions of a MOSFET. 2-D effects such as Threshold Roll-off and Drain Induced Barrier Lowering are accounted for with an empirical function G constructed by fitting our equations to measured data. The model is scalable, and only one round of fitting to measured data is needed for each process technology. The resulting drain current is continuous over the entire operating range of the transistor.

A New Continuous Model for Deep Submicron MOSFETs

ISBN: 0-9666135-7-0
Pages: 741