MSM 2000
MSM 2000
Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems

Compact Modeling for Deep Submicron Devices Chapter 7

Automatic Generation of Equivalent Circuits from Device Simulation

Authors: A. Pacelli, M. Mastrapasqua, M.A. Alam and S. Luryi

Affilation: Bell Laboratories, Lucent Technologies, United States

Pages: 337 - 340

Keywords: compact models, equivalent circuits, RF circuit simulation, semconductor device equations

We present a novel methodology for the direct extraction of equivalent circuit models from device simulation. The circuit topology is physically based, i.e., each voltage node corresponds to a quasi-Fermi level or to an electrostatic potential. Circuit equations and branch-constitutive equaitons are derived from the Poisson and continuity equations. Although only d.c. simulation results are employed, the model achieves a.c. predictive power by including charge-storage elements as capacitors. The technique has been impletmented for one-dimensional devices. Examples are shown for pn junctions including high frequency and high injections regiems. An example of optical response of a photo-transistor is presented, demonstrating the applicability of the method to optoelectonic and three-terminal devices.

Automatic Generation of Equivalent Circuits from Device Simulation

ISBN: 0-9666135-7-0
Pages: 741