Automatic Generation of Equivalent Circuits from Device Simulation

	MSM 2000 Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems Chapter 7: Compact Modeling for Deep Submicron Devices
	Automatic Generation of Equivalent Circuits from Device Simulation
Authors:	A. Pacelli, M. Mastrapasqua, M.A. Alam and S. Luryi
Affilation:	Bell Laboratories, Lucent Technologies, US
Pages:	337 - 340
Keywords:	compact models, equivalent circuits, RF circuit simulation, semconductor device equations
Abstract:	We present a novel methodology for the direct extraction of equivalent circuit models from device simulation. The circuit topology is physically based, i.e., each voltage node corresponds to a quasi-Fermi level or to an electrostatic potential. Circuit equations and branch-constitutive equaitons are derived from the Poisson and continuity equations. Although only d.c. simulation results are employed, the model achieves a.c. predictive power by including charge-storage elements as capacitors. The technique has been impletmented for one-dimensional devices. Examples are shown for pn junctions including high frequency and high injections regiems. An example of optical response of a photo-transistor is presented, demonstrating the applicability of the method to optoelectonic and three-terminal devices.
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ISBN:	0-9666135-7-0
Pages:	741
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