MSM 2000
MSM 2000
Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems

Compact Modeling for Deep Submicron Devices Chapter 7

A Novel Approach to Compact I-V Modeling for Deep-Submicron MOSFET's Technology Development and Circuit Simulation

Authors: X. Zhou and K.Y. Lim

Affilation: Nanyang Technological University, Singapore

Pages: 333 - 336

Keywords: MOSFET, compact model, de-embed, parameter extraction, process correlation

Abstract:
This paper presents a novel approach to formulating compact I-V models for deep-submicron MOS technology development. The developed model is a one-region closed-form equation that resembles the same form as the long-channel one, which covers full range of channel length and bias conditions. Model parameter extraction follows a one-iteration prioritized sequence with minimum measurement data, and can be correlated to process variables.

A Novel Approach to Compact I-V Modeling for Deep-Submicron MOSFET's Technology Development and Circuit Simulation

ISBN: 0-9666135-7-0
Pages: 741