A Novel Approach to Compact I-V Modeling for Deep-Submicron MOSFET's Technology Development and Circuit Simulation

	MSM 2000 Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems Chapter 7: Compact Modeling for Deep Submicron Devices
	A Novel Approach to Compact I-V Modeling for Deep-Submicron MOSFET's Technology Development and Circuit Simulation
Authors:	X. Zhou and K.Y. Lim
Affilation:	Nanyang Technological University, SG
Pages:	333 - 336
Keywords:	MOSFET, compact model, de-embed, parameter extraction, process correlation
Abstract:	This paper presents a novel approach to formulating compact I-V models for deep-submicron MOS technology development. The developed model is a one-region closed-form equation that resembles the same form as the long-channel one, which covers full range of channel length and bias conditions. Model parameter extraction follows a one-iteration prioritized sequence with minimum measurement data, and can be correlated to process variables.
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ISBN:	0-9666135-7-0
Pages:	741
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