Modeling of Threshold Voltage with Reverse Short Channel Effect

	MSM 2000 Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems Chapter 7: Compact Modeling for Deep Submicron Devices
	Modeling of Threshold Voltage with Reverse Short Channel Effect
Authors:	K.Y. Lim, X. Zhou and Y. Wang
Affilation:	Nanyang Technological University, SG
Pages:	317 - 320
Keywords:	RSCE, lateral non-uniform profile, threshold voltage, compact model, MOSFET
Abstract:	This paper presents a new reverse short channel effect (RSCE) model for threshold voltage modeling of submicrometer MOSFETs. Unlike those conventional empirically-based RSCE models, the proposed model is derived and simplified based on two Gaussian profiles to simulate boron pile-up at the source and drain edges of nMOS devices. The model has a simple compact form that can be utilized to study and characterize the pile-up profile of advanced halo-implant MOSFETs. The analytical model has been applied to, and verified with, experimental data of a 0.25-mm CMOS process for various channel length and substrate bias conditions.
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ISBN:	0-9666135-7-0
Pages:	741
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