Nano Science and Technology Institute
MSM 2000
MSM 2000
Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
Chapter 7: Compact Modeling for Deep Submicron Devices

Modeling of Threshold Voltage with Reverse Short Channel Effect

Authors:K.Y. Lim, X. Zhou and Y. Wang
Affilation:Nanyang Technological University, SG
Pages:317 - 320
Keywords:RSCE, lateral non-uniform profile, threshold voltage, compact model, MOSFET
Abstract:This paper presents a new reverse short channel effect (RSCE) model for threshold voltage modeling of submicrometer MOSFETs. Unlike those conventional empirically-based RSCE models, the proposed model is derived and simplified based on two Gaussian profiles to simulate boron pile-up at the source and drain edges of nMOS devices. The model has a simple compact form that can be utilized to study and characterize the pile-up profile of advanced halo-implant MOSFETs. The analytical model has been applied to, and verified with, experimental data of a 0.25-mm CMOS process for various channel length and substrate bias conditions.
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