 | MSM 2000
Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
Chapter 7: Compact Modeling for Deep Submicron Devices |
| - | Verilog-AMS Eases Mixed Mode Signal Simulation |
| | I. Miller and T. Cassagnes |
| | Motorola ESD Europe, U.S.A. |
| - | A Novel Method for the De-Embedding of S-Parameters of Double Heterojunction d-doped PHEMTs - Modeling and Measurements |
| | R.V.V.V.J. Rao, J. Joe, Y.W.M. Chia, K.S. Ang, H. Wang and G.I. Ng |
| | National University of Singapore, Singapore |
| - | Modeling of On-Chip Simultaneous Swithcing Noise in VDSM CMOS Circuits |
| | K.T. Tang and E.G. Friedman |
| | University of Rochester, U.S.A. |
| - | Modeling of Threshold Voltage with Reverse Short Channel Effect |
| | K.Y. Lim, X. Zhou and Y. Wang |
| | Nanyang Technological University, Singapore |
| - | Behavioral Models and Specific Design Tool for New Power Integrated Devices |
| | T. Bordingnon, J.L. Sanchez, P. Austin and V. Houdbert |
| | LAAS/CNRS, France |
| - | Improved Prediction of Length/Temperature-Dependent Impact Ionization Induced Body Current Based on an Accurate Saturation Drain Voltage Model |
| | S.H.L. Seah, K.S. Yeo, J.G. Ma and M.A. Do |
| | Nanyang Technological University, Singapore |
| - | Analytical Results for the Current-Voltage Characteristics of an SOI-MOSFET |
| | H.C. Morris, E. Cumberbatch, T. Phillips and B. Hinderberger |
| | Claremont Graduate University, U.S.A. |
| - | A Novel Approach to Compact I-V Modeling for Deep-Submicron MOSFET's Technology Development and Circuit Simulation |
| | X. Zhou and K.Y. Lim |
| | Nanyang Technological University, Singapore |
| - | Automatic Generation of Equivalent Circuits from Device Simulation |
| | A. Pacelli, M. Mastrapasqua, M.A. Alam and S. Luryi |
| | Bell Laboratories, Lucent Technologies, U.S.A. |
| - | Genetic Algorithm Based MOSFET Model Parameter Extraction |
| | M. Keser and K. Joardar |
| | Motorola SPS, U.S.A. |
| - | A New Continuous Model for Deep Submicron MOSFETs |
| | K-M.S. Chan, N-C.A. Wong, C-J. Chao, D-B. Kao, S-C. Wong and C.Y. Yang |
| | Winbond Electronics Corporation America, U.S.A. |
| - | Mobility Degradation and Current Loss Due to Vertical Electric Field in Channel Area of Submicron MOS Devices |
| | A.A. Keshavarz, J.L. Walters and R. Sampson |
| | STMicrolectronics, U.S.A. |
| ISBN: | 0-9666135-7-0 |
| Pages: | 741 |
| Hardcopy: | $100.00 |
| Special: | 3 CD Set — 15% off with Free Shipping |
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