Simulating IMD in SiGe HBTs: How good are our models?

	MSM 2000 Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems Chapter 6: Characterization, Parameter Extraction, Calibration
	Simulating IMD in SiGe HBTs: How good are our models?
Authors:	P. Wong and B. Pejcinovic
Affilation:	Portland State University, US
Pages:	301 - 304
Keywords:	intermodulation distortion, silicon-germanium, HBT, modeling
Abstract:	Nominal transistor model parameters are found to be insufficient for reliably predicting intermodulation distortion (IMD) in heterojunction bipolar transistors. A method for optimizing the model parameters to give a more accurate simulation of IMD performance is outlined. Differences between transistor models are observed and analyzed by experimentally measuring IMD in silicon-germanium heterojunction bipolar transistors and comparing the results to computer simulations.
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ISBN:	0-9666135-7-0
Pages:	741
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