Authors: P. Wong and B. Pejcinovic
Affilation: Portland State University, United States
Pages: 301 - 304
Keywords: intermodulation distortion, silicon-germanium, HBT, modeling
Nominal transistor model parameters are found to be insufficient for reliably predicting intermodulation distortion (IMD) in heterojunction bipolar transistors. A method for optimizing the model parameters to give a more accurate simulation of IMD performance is outlined. Differences between transistor models are observed and analyzed by experimentally measuring IMD in silicon-germanium heterojunction bipolar transistors and comparing the results to computer simulations.