MSM 2000
MSM 2000
Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems

Characterization, Parameter Extraction, Calibration Chapter 6

Simulating IMD in SiGe HBTs: How good are our models?

Authors: P. Wong and B. Pejcinovic

Affilation: Portland State University, United States

Pages: 301 - 304

Keywords: intermodulation distortion, silicon-germanium, HBT, modeling

Abstract:
Nominal transistor model parameters are found to be insufficient for reliably predicting intermodulation distortion (IMD) in heterojunction bipolar transistors. A method for optimizing the model parameters to give a more accurate simulation of IMD performance is outlined. Differences between transistor models are observed and analyzed by experimentally measuring IMD in silicon-germanium heterojunction bipolar transistors and comparing the results to computer simulations.

Simulating IMD in SiGe HBTs: How good are our models?

ISBN: 0-9666135-7-0
Pages: 741