Nano Science and Technology Institute
MSM 2000
MSM 2000
Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
Chapter 6: Characterization, Parameter Extraction, Calibration

Simulating IMD in SiGe HBTs: How good are our models?

Authors:P. Wong and B. Pejcinovic
Affilation:Portland State University, US
Pages:301 - 304
Keywords:intermodulation distortion, silicon-germanium, HBT, modeling
Abstract:Nominal transistor model parameters are found to be insufficient for reliably predicting intermodulation distortion (IMD) in heterojunction bipolar transistors. A method for optimizing the model parameters to give a more accurate simulation of IMD performance is outlined. Differences between transistor models are observed and analyzed by experimentally measuring IMD in silicon-germanium heterojunction bipolar transistors and comparing the results to computer simulations.
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