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 | MSM 2000
Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
Chapter 6: Characterization, Parameter Extraction, Calibration |
| | Calculation of the AC Electroquasistatic Sinusoidal Steady-State Coulomb Force on a Conductor Coated with a Lossy Dielectric | | Authors: | P. Osterberg and A. Inan | | Affilation: | University of Portland, U.S.A. | | Pages: | 277 - 280 | | Keywords: | Coulomb force, time-average sinusoidal steady-state force, lossy dielectric, dielectric relaxation, MEMS | | Abstract: | The ability to directly calculate the analytical closed-form electroquasistatic sinusoidal steady-state Coulomb force (or ac force) exerted on a conductor coated with a lossy dielectric in the presence of a second grounded conductor and excited by a sinusoidal voltage is of interest in areas such as Microelectromechanical Systems (MEMS). This ac force is due to the phenomenon of dielectric relaxation existing in the lossy dielectric and is dependent on the operating frequency of the voltage source as well as the material properties of the lossy dielectric. In this paper, the authors apply a new technique based on expressing the Coulomb force in terms of a special singularity integral to directly calculate the total ac force exerted on a conductor coated with a lossy dielectric. Specifically, the example of the calculation of the Coulomb ac force on a simplified structure consisting of a solid incompressible lossy dielectric slab attached to the lower plate of a parallel-plate capacitor excited by a sinusoidal voltage is considered. |  | View paper | | ISBN: | 0-9666135-7-0 |
| Pages: | 741 |
| Hardcopy: | $100.00 |
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