Investigation of Cross-Coupling and Parasitic Effects in Microelectromechanical Devices on Device and System Level

	MSM 2000 Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems Chapter 5: Equivalent Circuits, Behavioral and Multi-Level Simulation
	Investigation of Cross-Coupling and Parasitic Effects in Microelectromechanical Devices on Device and System Level
Authors:	G. Schrag, G. Zelder and G. Wachutka
Affilation:	Munich University of Technology, DE
Pages:	193 - 196
Keywords:	coupled-field finite element analysis, small signal analysis, macromodel, cross-coupling effects, MEMS
Abstract:	With progressing monolithic integration of entire micro-electromechanical systems on one chip fabricated by standard IC technology we have to cope with the problem that the operation of embedded transducer elements is considerably affected by cross-coupling and parasitic effects. Referring to a BiCMOS-integrated capacitive pressure sensor as an illustrative example, we demonstrate that a detailed coupled-field analysis on the device level is indispensable to understand the interplay of various effects which contribute to the sensor output. On the basis of this analysis we are able to build a physically-based macromodel for the predictive simulation of the system performance.
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ISBN:	0-9666135-7-0
Pages:	741
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