Nano Science and Technology Institute
MSM 2000
MSM 2000
Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
 
Chapter 3: Computational Materials
 

Numerical Simulation of Periodical Distribution of Antisite Defects in Irradiated Semiconductors

Authors:V.V. Mykhaylovskyy, K.C. Russell and V.I. Sugakov
Affilation:Academy of Science of Ukraine, UA
Pages:114 - 117
Keywords:irradiation, self-organization, superlattice, antisite defects, reaction rate
Abstract:A simulation of radiation-induced instability in binary semiconductors, such as GaAs, was fulfilled. The instability is connected with antisite defects accumulated. It was shown that the number of antisite defects in crystal under irradiation can significantly exceed their equilibrium concentration. We have found that the instability with respect to periodical defect distribution appears at some conditions of irradiation. The wavelength of the periodical distribution was estimated as 100 nm - 10 _m depending on crystal parameters.
Numerical Simulation of Periodical Distribution of Antisite Defects in Irradiated SemiconductorsView PDF of paper
ISBN:0-9666135-7-0
Pages:741
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