MSM 2000
MSM 2000
Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems

Computational Materials Chapter 3

Simulations for Optimized Piezoresistors

Authors: D. Mladenovic and D. Vasileska

Affilation: Motorola, United States

Pages: 106 - 109

Keywords: Diffused piezoresistors, mobility, shallow junctions

Abstract:
As a phenomenon, piezoresistive effect is well understood from the theoretical point of view. Experimental characterizations have also been done on a variety of uniformly doped samples. However, for modern LSI structures, with shallow diffused junctions that have steep gaussian profile, and short distances between electrodes, piezoresistive coefficients differ significantly from those for uniformly doped samples. This paper considers effects of doping profile, electric field level and its distribution on free carrier mobility in order to asses sensitivity of piezoresistors. Simulated performance over temperature range is analyzed as well.

Simulations for Optimized Piezoresistors

ISBN: 0-9666135-7-0
Pages: 741