Nano Science and Technology Institute
MSM 2000
MSM 2000
Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
Chapter 2: Process Modeling

Self-Adapting Vertices for Mask-Layout Synthesis

Authors:C-Y. Lee and E.K. Antonsson
Affilation:California Institute of Technology, US
Pages:83 - 86
Keywords:mask-layout synthesis, bulk etching, evolutionary algorithms
Abstract:An efficient procedure for synthesizing MEMS mask-layouts for a desired 3-D shape is discussed. This method can greatly reduce the number of design and prototype iterations required to produce a desired device. The method is based on evolutionary algorithms, where the locations of vertices in the polygonal mask-layout are optimized, such that the resulting shape is `closest' to the desired shape [2], [3]. This work has been extended here to include varying the number of vertices in the mask-layout polygon(s), to free the designer from having to make an initial estimate at the complexity of the mask-layout required. Preliminary results are presented.
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