Nano Science and Technology Institute
MSM 2000
MSM 2000
Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
 
Chapter 2: Process Modeling
 

On 2D/3D Numerical Oxidation Modeling: Calibration and Investigation of Silicon Crystal Orientation Effect on Stresses in Shallow Trench Isolations

Authors:T. Hoffmann, K.F. Dombrowski and V. Senez
Affilation:IEMN-ISEN, UMR CNRS, FR
Pages:59 - 62
Keywords:isolation, viscoelasticity, raman, anisotropy
Abstract:Shallow trench isolations (STI) process needs careful optimization of thermal annealings in order to minimize leakage currents which may result from excessive mechanical stresses. Due to its intrinsic three-dimensional structure, conventional 2D process simulator is no more relevant. This paper examines stress generation in STI using for the first time a 3D fully non-linear viscoelastic oxidation model implemented with the Finite Element Method.
On 2D/3D Numerical Oxidation Modeling: Calibration and Investigation of Silicon Crystal Orientation Effect on Stresses in Shallow Trench IsolationsView PDF of paper
ISBN:0-9666135-7-0
Pages:741
Up
© 2014 Nano Science and Technology Institute. All Rights Reserved.
Terms of Use | Privacy Policy | Contact Us | Site Map