On 2D/3D Numerical Oxidation Modeling: Calibration and Investigation of Silicon Crystal Orientation Effect on Stresses in Shallow Trench Isolations

Hoffmann T., Dombrowski K.F., Senez V.
IEMN-ISEN, UMR CNRS, FR

Keywords: anisotropy, isolation, raman, viscoelasticity

Shallow trench isolations (STI) process needs careful optimization of thermal annealings in order to minimize leakage currents which may result from excessive mechanical stresses. Due to its intrinsic three-dimensional structure, conventional 2D process simulator is no more relevant. This paper examines stress generation in STI using for the first time a 3D fully non-linear viscoelastic oxidation model implemented with the Finite Element Method.

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Journal: TechConnect Briefs
Volume: Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
Published: March 27, 2000
Pages: 59 - 62
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-9666135-7-0