MSM 2000
MSM 2000
Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems

Process Modeling Chapter 2

On 2D/3D Numerical Oxidation Modeling: Calibration and Investigation of Silicon Crystal Orientation Effect on Stresses in Shallow Trench Isolations

Authors: T. Hoffmann, K.F. Dombrowski and V. Senez

Affilation: IEMN-ISEN, UMR CNRS, France

Pages: 59 - 62

Keywords: isolation, viscoelasticity, raman, anisotropy

Abstract:
Shallow trench isolations (STI) process needs careful optimization of thermal annealings in order to minimize leakage currents which may result from excessive mechanical stresses. Due to its intrinsic three-dimensional structure, conventional 2D process simulator is no more relevant. This paper examines stress generation in STI using for the first time a 3D fully non-linear viscoelastic oxidation model implemented with the Finite Element Method.

On 2D/3D Numerical Oxidation Modeling: Calibration and Investigation of Silicon Crystal Orientation Effect on Stresses in Shallow Trench Isolations

ISBN: 0-9666135-7-0
Pages: 741