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 | MSM 2000
Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
Chapter 2: Process Modeling |
| | On 2D/3D Numerical Oxidation Modeling: Calibration and Investigation of Silicon Crystal Orientation Effect on Stresses in Shallow Trench Isolations | | Authors: | T. Hoffmann, K.F. Dombrowski and V. Senez | | Affilation: | IEMN-ISEN, UMR CNRS, France | | Pages: | 59 - 62 | | Keywords: | isolation, viscoelasticity, raman, anisotropy | | Abstract: | Shallow trench isolations (STI) process needs careful optimization of thermal annealings in order to minimize leakage currents which may result from excessive mechanical stresses. Due to its intrinsic three-dimensional structure, conventional 2D process simulator is no more relevant. This paper examines stress generation in STI using for the first time a 3D fully non-linear viscoelastic oxidation model implemented with the Finite Element Method. |  | View paper | | ISBN: | 0-9666135-7-0 |
| Pages: | 741 |
| Hardcopy: | $100.00 |
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