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 | MSM 2000
Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
Chapter 2: Process Modeling |
| | Modeling of the Self-Limiting Oxidation for Nanofabrication of Si | | Authors: | Y. Chen | | Affilation: | University of California, U.S.A. | | Pages: | 56 - 58 | | Keywords: | self oxidation, modeling, nanoscale | | Abstract: | The self-limiting oxidation method has been frequently used to fabricate the nano-scale (e.g., sub-5 nm) Si columns and widely reported in the recent literature [1, 2]. However, few theoretical modeling has been carried out to quantitatively describe the observed oxide growth behavior in such a small scale. Under an incompressible-oxide assumption, we extend a conventional 2-D model to give a closed-form solution for the nanoscale oxide growth. The model predicts the self-limiting growth behavior quite well. |  | View paper | | ISBN: | 0-9666135-7-0 |
| Pages: | 741 |
| Hardcopy: | $100.00 |
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