Authors: Y. Chen
Affilation: University of California, United States
Pages: 56 - 58
Keywords: self oxidation, modeling, nanoscale
The self-limiting oxidation method has been frequently used to fabricate the nano-scale (e.g., sub-5 nm) Si columns and widely reported in the recent literature [1, 2]. However, few theoretical modeling has been carried out to quantitatively describe the observed oxide growth behavior in such a small scale. Under an incompressible-oxide assumption, we extend a conventional 2-D model to give a closed-form solution for the nanoscale oxide growth. The model predicts the self-limiting growth behavior quite well.