Nano Science and Technology Institute
MSM 2000
MSM 2000
Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
Chapter 2: Process Modeling

Modeling of the Self-Limiting Oxidation for Nanofabrication of Si

Authors:Y. Chen
Affilation:University of California, US
Pages:56 - 58
Keywords:self oxidation, modeling, nanoscale
Abstract:The self-limiting oxidation method has been frequently used to fabricate the nano-scale (e.g., sub-5 nm) Si columns and widely reported in the recent literature [1, 2]. However, few theoretical modeling has been carried out to quantitatively describe the observed oxide growth behavior in such a small scale. Under an incompressible-oxide assumption, we extend a conventional 2-D model to give a closed-form solution for the nanoscale oxide growth. The model predicts the self-limiting growth behavior quite well.
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