Nano Science and Technology Institute
MSM 2000
MSM 2000
Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
 
Chapter 2: Process Modeling
 

Two-Dimensional Simulation of Scanning Capacitance Microscopy Measurements of Arbitrary Doping Profiles

Authors:L. Ciampolini, M. Ciappa, P. Malberti and W. Fichtner
Affilation:Swiss Federal Institute of Technology, CH
Pages:48 - 51
Keywords:scanning capacitance microscopy, 2D carrier profiling, device simulation, ultrashallow junctions
Abstract:Accurate prediction of doping distributions in modern VLSI devices (e.g. shallow junctions) with TCAD tools represents a major challenge which requires the process simulation models to be accurately tuned on the basis of two-dimensional dopant profile measurements. Scanning capacitance microscopy is a scanning probe based technique which provides images with spatial resolution in the 10 nm range. The extraction of quantitative doping information from the raw experimental data requires a calibration procedure. Presently, most of the results are obtained either with a large reverse simulation effort or with a first-order data inversion procedure (direct inversion). The current assumption of the latter approach is thequasi-uniformity ofthe doping profile. The scope of the present paper is to investigate the limits of this simplified approach by two-dimensional simulations of SCM measurements.
Two-Dimensional Simulation of Scanning Capacitance Microscopy Measurements of Arbitrary Doping ProfilesView PDF of paper
ISBN:0-9666135-7-0
Pages:741
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