Authors: Y. Ban, S. Yoon, O. Kwon and T. Won
Affilation: Inha University, Korea
Pages: 44 - 47
Keywords: low energy ion implantation, Monte-Carlo, simulation, modeling
In this paper, a new method for an accurate and time efficient 3D simulation of ion implantation and an ultra-low energy (sub 2keV) Monte-Carlo ion implantation model are suggested. The dopant and damage profiles show very good agreement with SIMS and RBS data, respectively. The Ion Distribution Replica Method has been implemented into the model to get a computational efficient in a 3D simulation, and we have calculated the 3D Monte-Carlo simulation into the topographically complex structure.