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MSM 2000
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Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
MSM 2000
Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
 
Chapter 2: Process Modeling
 

Modeling of Ultra-low Energy Ion Implantation by Monte-Carlo Method

Authors:Y. Ban, S. Yoon, O. Kwon and T. Won
Affilation:Inha University, Korea
Pages:44 - 47
Keywords:low energy ion implantation, Monte-Carlo, simulation, modeling
Abstract:In this paper, a new method for an accurate and time efficient 3D simulation of ion implantation and an ultra-low energy (sub 2keV) Monte-Carlo ion implantation model are suggested. The dopant and damage profiles show very good agreement with SIMS and RBS data, respectively. The Ion Distribution Replica Method has been implemented into the model to get a computational efficient in a 3D simulation, and we have calculated the 3D Monte-Carlo simulation into the topographically complex structure.
Modeling of Ultra-low Energy Ion Implantation by Monte-Carlo MethodView paper
ISBN:0-9666135-7-0
Pages:741
Hardcopy:$100.00
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