Nano Science and Technology Institute - NSTI  
Nano Science and Technology Institute   Home | Subscribe | Site Map  
  ABOUT | COURSES | EVENTS | PUBLICATIONS | LEADERSHIP | OUTREACH | NEWS | PRESS | JOBS | Nanotechnology Solutions
px
px fade_top
Publications
Nanotech 2008 CDROM
Nanotech 2007 CDROM
Nanotech 2006 CDROM
Nanotech 2005 CDROM
Nanotech 2004 CDROM
3 CDROM Special Offer
Nanotech 2008 Vol. 1
Nanotech 2008 Vol. 2
Nanotech 2008 Vol. 3
Nanotech 2007 Vol. 1
Nanotech 2007 Vol. 2
Nanotech 2007 Vol. 3
Nanotech 2007 Vol. 4
Nanotech 2006 Vol. 1
Nanotech 2006 Vol. 2
Nanotech 2006 Vol. 3
Nanotech 2005 Vol. 1
Nanotech 2005 Vol. 2
Nanotech 2005 Vol. 3
WCM 2005
Nanotech 2004 Vol. 1
Nanotech 2004 Vol. 2
Nanotech 2004 Vol. 3
Nanotech 2003 Vol. 1
Nanotech 2003 Vol. 2
Nanotech 2003 Vol. 3
Nanotech 2002 Vol. 1
Nanotech 2002 Vol. 2
Nanotech 2001 Vol. 1
Nanotech 2001 Vol. 2
MSM 2000
MSM 99
MSM 98
Index of Authors
Index of Keywords
Index of Affiliations
Library Request Form
Shopping Cart
Order Form
 
Publications Publications
MSM 2000
p
 
Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
MSM 2000
Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
 
Chapter 2: Process Modeling
 

Full-chip Process Simulation for Silicon DRC

Authors:E. Sahouria, Y. Granik, N. Cobb and O. Toublan
Affilation:Mentor Graphics Corporation, U.S.A.
Pages:32 - 35
Keywords:OPC, DRC, lithography
Abstract:We have developed fast IC process simulation technique based on an empirical resist and etch models to compute the silicon image of designs as large as a full ULSI chip. The simulated silicon image is used to verify the correct electrical operation of the chip and its compliance to semiconductor manufacturing rules. This significantly reduces the manufacturing and development turn-around-time (TAT) by decreasing the number of costly and time-consuming manufacturing test cycles. The basis of these techniques is a fast edge-based optical and process simulator. An edge-movement algorithm is used to compute the displacements of edge fragments in the original design, yielding an approximation to the silicon image. In this paper we will demonstrate the need for Silicon DRC, describe the simulation and image computation algorithms, and illustrate the usefulness of the technique on real circuits.
Full-chip Process Simulation for Silicon DRCView paper
ISBN:0-9666135-7-0
Pages:741
Hardcopy:$100.00
Special:3 CD Set — 15% off with Free Shipping
Up
Upcoming Events
Nanotech 2009
Cleantech 2009
BioNano 2009
TechConnect Summit
nanoPRwire™
nanoPRwire
News Headlines
nano World news
 
 
 
 
px
© Nano Science and Technology Institute     About NSTI | Terms of Use | Privacy Policy | Contact