Nano Science and Technology Institute
Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
MSM 2000
Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems

Chapter 2:

Process Modeling

-Automated Mask-Layout and Process Synthesis for MEMS
 L. Ma and E.K. Antonsson
 California Institute of Technology, U.S.A.
-Creation of 3D Surface Models from 2D Layouts for BEM Anaylysis
 M. Spasojevic, P. Ljung and M. Bächtold
 Coyote Systems, Inc., U.S.A.
-Process Simulation for Contact Print Microlithography
 A.A. Darhuber, S.M. Miller, S.M. Troian and S. Wagner
 Princeton University, U.S.A.
-Full-chip Process Simulation for Silicon DRC
 E. Sahouria, Y. Granik, N. Cobb and O. Toublan
 Mentor Graphics Corporation, U.S.A.
-Systematic Design and Optimization of Multi-Material, Multi-Degree-of-Freedom Micro Actuators
 O. Sigmund
 Technical University of Denmark, Denmark
-Robust Ion-Implantation Process Design through Statistical Analysis
 C. Sudhama, R. Thoma, M. Morris, J. Christiansen and I-S. Lim
 Motorola Digital DNA Labs, U.S.A.
-Modeling of Ultra-low Energy Ion Implantation by Monte-Carlo Method
 Y. Ban, S. Yoon, O. Kwon and T. Won
 Inha University, Korea
-Two-Dimensional Simulation of Scanning Capacitance Microscopy Measurements of Arbitrary Doping Profiles
 L. Ciampolini, M. Ciappa, P. Malberti and W. Fichtner
 Swiss Federal Institute of Technology, Switzerland
-Systematic Global Calibration of a Process Simulator
 J-H. Lee, K-D. Kim, J-T. Kong, S-W. Lee, Y-W. Kim and D-H. Baek
 Samsung Electronics Co.Ltd., Korea
-Modeling of the Self-Limiting Oxidation for Nanofabrication of Si
 Y. Chen
 University of California, U.S.A.
-On 2D/3D Numerical Oxidation Modeling: Calibration and Investigation of Silicon Crystal Orientation Effect on Stresses in Shallow Trench Isolations
 T. Hoffmann, K.F. Dombrowski and V. Senez
 IEMN-ISEN, UMR CNRS, France
-Simulation of Orientation-Dependent Etching of Silicon Using a New Step Flow Model of 3D Structuring
 A. Horn, H. Schröder, E. Obermeier and G. Wachutka
 Munich University of Technology, Germany
-Strength of Nanoscale Copper Connection Under Shear
 P. Heino
 Tampere University of Technology, Finland
-Modeling the Microstructure and Elastic Properties of Complex Materials
 A.P. Roberts and E.J. Garboczi
 University of Queensland, Australia
-Pre-Physical Design Analysis and Optimization of Repeaters Based on Technology Node, Materials, Devices, and Repeater Options
 W.T. Lynch
 Independent Consultant, U.S.A.
-Modeling of Focused Ion Beam Trimming of Cantilever Beams
 T. Lam and R.B. Darling
 Univeristy of Washington, U.S.A.
-Self-Adapting Vertices for Mask-Layout Synthesis
 C-Y. Lee and E.K. Antonsson
 California Institute of Technology, U.S.A.
-Computer Simulation from Electron Beam Lithography to Optical Lithography
 Z. Cui
 Rutherford Appleton Laboratory, United Kingdom
ISBN:0-9666135-7-0
Pages:741
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