 | MSM 2000
Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
Chapter 10: Quantum Devices |
| | Long-Range Coulomb Interactions in Small Silicon Devices: Transconductance and Mobility Degradation |
| Authors: | M.V. Fischetti and S.E. Laux |
| Affilation: | IBM Research Division, U.S.A. |
| Pages: | 461 - 464 |
| Keywords: | Monte Carlo simulations, Coulomb interactions, MOS transistors mobility VLSI scaling |
| Abstract: | In small silicon devices,conduction electrons in the channel are subject to long-range Coulomb interactions with electrons in the heavily-doped drain,source,and gate regions.We show that for devices with channel lengths shorter than about 40 nm and oxides thinner than 2.5 nm these interactions cause a reduction of the electron velocity.We present results obtained using both semiclassical two-dimensional self-consistent Monte Carlo-Poisson simulations and a quantum-mechanical model based on electron scattering from gate-oxide interface plasmons. |
 | View paper |
| ISBN: | 0-9666135-7-0 |
| Pages: | 741 |
| Hardcopy: | $100.00 |
| Special: | 3 CD Set — 15% off with Free Shipping |
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