Nano Science and Technology Institute
MSM 2000
MSM 2000
Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
 
Chapter 10: Quantum Devices
 

Long-Range Coulomb Interactions in Small Silicon Devices: Transconductance and Mobility Degradation

Authors:M.V. Fischetti and S.E. Laux
Affilation:IBM Research Division, US
Pages:461 - 464
Keywords:Monte Carlo simulations, Coulomb interactions, MOS transistors mobility VLSI scaling
Abstract:In small silicon devices,conduction electrons in the channel are subject to long-range Coulomb interactions with electrons in the heavily-doped drain,source,and gate regions.We show that for devices with channel lengths shorter than about 40 nm and oxides thinner than 2.5 nm these interactions cause a reduction of the electron velocity.We present results obtained using both semiclassical two-dimensional self-consistent Monte Carlo-Poisson simulations and a quantum-mechanical model based on electron scattering from gate-oxide interface plasmons.
Long-Range Coulomb Interactions in Small Silicon Devices: Transconductance and Mobility DegradationView PDF of paper
ISBN:0-9666135-7-0
Pages:741
Up
© 2014 Nano Science and Technology Institute. All Rights Reserved.
Terms of Use | Privacy Policy | Contact Us | Site Map