Modelling Coupled Motion of Electrons in Quantum Dots with Wetting Layers

	Nanotech 2002 Vol. 2 Technical Proceedings of the 2002 International Conference on Computational Nanoscience and Nanotechnology Chapter 9: Quantum Effects, Quantum Devices and Spintronics
	Modelling Coupled Motion of Electrons in Quantum Dots with Wetting Layers
Authors:	R.V.N. Melnik and M. Willatzen
Affilation:	University of Southern Denmark, DK
Pages:	209 - 212
Keywords:	quantum dots with wetting layers, envelope functions
Abstract:	The influence of wettin-layer states on quantum-dot states and vice-versa is examined numerically employing a one-band model for electroncs in the conduction band. This problem corresponds to the case where a few monolayer InAs grown on GaAs(100) oriented substrates leads to self-assembly of quantum dots with wetting layers as is known experimentally. It is shown that the quantum-dot ground state of the combined structure is considerably affected by the presence of the wetting layer, and similarly, wetting-layer states are affected by the presence of the quantum dot. This quantum dot/wetting layer state interference is expected t have an impact on carrier-capture phenomena and operation speeds of electronic and optical devices using quantum dots as active regions.
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ISBN:	0-9708275-6-3
Pages:	504
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