Nano Science and Technology Institute
Nanotech 2002 Vol. 2
Nanotech 2002 Vol. 2
Technical Proceedings of the 2002 International Conference on Computational Nanoscience and Nanotechnology
Chapter 9: Quantum Effects, Quantum Devices and Spintronics

Modeling and Simulation of Single-Electron Multi Tunnel Junction Memory

Authors:C. Le Royer, G. Le Carval, M. Sanquer and D. Fraboulet
Affilation:CEA-LET, FR
Pages:205 - 208
Keywords:modeling, simulation, nanocrystal memory, double tunnel junction, quantum confinement
Abstract:For optimization of Quantum-Dot-based Multi Tunnel Junction Memory (MTJM) [1], we propose an original compact model validated by physical simulations. We analyze the impact of physical and technological parameters (Temperature, dots density, geometries…) on writing and retention characteristics of the MTJM cell, and so we show that this concept could be an alternative for Advanced DRAM Applications (for the 50 nm node predicted around 2011 by ITRS).
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