Nano Science and Technology Institute
Nanotech 2002 Vol. 2
Nanotech 2002 Vol. 2
Technical Proceedings of the 2002 International Conference on Computational Nanoscience and Nanotechnology
 
Chapter 9: Quantum Effects, Quantum Devices and Spintronics
 

The Landauer Approach to the Critical Source-Channel Barrier in MOSFETs

Authors:M. Lundstrom and J.H. Rhew
Affilation:Purdue University, US
Pages:189 - 192
Keywords:MOSFET, transistor, ballistic transport, nanoelectronics
Abstract:A simple treatment of the nano-scale MOSFET in the spirit of the Landauer approach to transport in mesoscopic structures is described. First, the essential physics is illustrated by examining numerical simulations. Next, the analytical theory of the ballistic MOSFET is discussed, and finally, the role of scattering in nano-scale MOSFETs is discussed.
The Landauer Approach to the Critical Source-Channel Barrier in MOSFETsView PDF of paper
ISBN:0-9708275-6-3
Pages:504
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