The Use of a Green's Function Formalism for the Simulation of Semiconductor Device Performance

	Nanotech 2002 Vol. 2 Technical Proceedings of the 2002 International Conference on Computational Nanoscience and Nanotechnology Chapter 9: Quantum Effects, Quantum Devices and Spintronics
	The Use of a Green's Function Formalism for the Simulation of Semiconductor Device Performance
Authors:	D. Jovanovic
Affilation:	Motorola, US
Pages:	181 - 184
Keywords:	quantum transport, non-equilibrium Green functions, Kadanoff-Baym, device simulation, MOSFET
Abstract:	Non-equilibrium quantum transport simulation techniques (e.g. the generalized Kadanoff-Baym approach) have been in existence for over 40 years but have only recently become numerically viable for the simulation of semiconductor devices. This paper reports on Motorola's effort at building a quantum transport device simulator suitable for the predictive quantum-mechanical simulation of MOSFETs beyond the Leff = 100 nm technology-node.
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ISBN:	0-9708275-6-3
Pages:	504
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