It has been recently reported that the electrical charge in a semiconductive carbon nanotube is not evenly distributed, but rather it is divided into charge “islands” [1,2]. This paper links the aforementioned phenomenon to tunneling and provides further insight into the higher rate of tunneling processes, which makes tunneling devices attractive [3]. This paper also provides a basis for calculating the charge profile over the length of the tube so that nanoscale devices’ conductive properties may be fully exploited.
