Energy-Band Structure of Strained Indirect Gap Semiconductor: A k . p Method

	Nanotech 2002 Vol. 2 Technical Proceedings of the 2002 International Conference on Computational Nanoscience and Nanotechnology Chapter 16: Materials and Nanostructures Studies
	Energy-Band Structure of Strained Indirect Gap Semiconductor: A k . p Method
Authors:	N. Cavassilas, F. Aniel and G. Fishman
Affilation:	CNRS, FR
Pages:	411 - 414
Keywords:	k.p. theory, strain, SiGe
Abstract:	A strain Hamiltonian Hst, associated with a sps* k.p Hamiltonian Hkp is used to descibe the valence band and the first two conduction bands of a strained indirect semiconductor. Hst takes into accoutn the Bir-Pikus parameters (a, b) used up to now to describe only the Brillouin zone center. The Hkp+Hst Hamiltonian allows one to calculate the energy dispersio nall over the Brillouin zone. The method is applied to Si strained on Sil-xGex alloy. We do not use the local (in k space) deformation potentials Pu, and pd conventionally used in indirect gap semiconductor to describe the conduction band. The energy band gap, the conduction bands split into the four equivalent in-plane valleys delta4 and the two valleys along the growth direction delta2 which result from teh above Hkp+Hst Hamiltonian are in very good agreement with other publications.
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ISBN:	0-9708275-6-3
Pages:	504
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